Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E AIT:C | Dynamic random access memory | DEX integrated circuits 21 grams (Approximate)

21 grams (Approximate)

2V pseudo open-drain I/O

Because of limitations on package power dissipation

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Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E AIT:C | Dynamic random access memory | DEX integrated circuits 21 grams (Approximate)Micron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E AIT: C features: Industrial and automotive temperature compliant VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS