Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AAT:E TR | Dynamic random access memory | DEX 15"-16" AVY:AL1001A03-E5

AVY:AL1001A03-E5

Part #: 578814-504

ITL:EP4S100G2F40I1G

Part #: IMBG65R048M1HXTMA1

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AAT:E TR | Dynamic random access memory | DEX 15"-16" AVY:AL1001A03-E5Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E AAT: E TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose