Micron Technology DRAM SDRAM-DDR4, Part #: MT61K512M32KPA-14:C | Dynamic random access memory | DEX CT Components 10V nominal or Low VDDQ

10V nominal or Low VDDQ = 0

Part #EKZG160ELL681MJC5S | Capacitor | DEX features: ・Adoption of innovative high stability electrolyte ・High ripple current and long endurance ・Rated voltage range : 6

Suitable for daily use to guard against pollen

Xiilnx FPGA Part #XC6VLX130T-L1FF784C

Micron Technology DRAM SDRAM-DDR4, Part #: MT61K512M32KPA-14:C | Dynamic random access memory | DEX CT Components 10V nominal or Low VDDQMicron Technology DRAM SGRAM GDDR6, Part #: MT61K512M32KPA 14: C features: VDD = VDDQ = 1. 35V 3% and 1. 25V 3% VPP = 1. 8V 3% +6% Data rate: 14 Gb s, 16 Gb s 2 separate independent channels (x16) x16 x8 and 2 channel pseudo channel (PC) mode configurations set at reset Single ended interfaces per channel for command address (CA) and data Differential clock input CK_t CK_c for CA per 2 channels Two differential clock inputs WCK_t WCK_c per channel for