Micron Technology DRAM , Part #MT41K128M16JT-125 XIT:K TR | Dynamic random access memory | DEX 14"-15" UC3825ADWTRG4

UC3825ADWTRG4

mode selection and output short circuit protection

the output noise can be reduced to 30 μVRMS in a 30-kHz bandwidth

Bus Speed8 GT/s

Micron Technology DRAM , Part #MT41K128M16JT-125 XIT:K TR | Dynamic random access memory | DEX 14"-15" UC3825ADWTRG4Micron Technology DRAM SDRAM DDR3L, Part #MT41K128M16JT 125 XIT: K TR Features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL)