Micron Technology DRAM SDRAM-DDR4, Part #:MT40A512M8SA-062E AAT:F | Dynamic random access memory | DEX Apple Watch 150 µA active current

150 µA active current

The SN74LV1T34 is a single buffer gate with reduced input thresholds to support voltage translation applications

MLX90316KGO

● 24 pieces 64M × 32 GDDR5 136-pin BGA

Micron Technology DRAM SDRAM-DDR4, Part #:MT40A512M8SA-062E AAT:F | Dynamic random access memory | DEX Apple Watch 150 µA active currentMicron Technology DRAM SDRAM DDR3L, MT40A512M8SA 062E AAT: F Features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh maximum interval time at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 96C to 105C 8ms at 106C to 125C 16 internal banks ( x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture