Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power It produces a clock output

It produces a clock output based on an integer multiple of an input reference frequency

NXP:S912ZVCA19F0MLFR

Description: IC REG CTRLR PUSH-PULL 8SOIC

Xilinx Field Programmable Gate Array Part #XCKU3P-1SFVB784E

Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power It produces a clock outputMicron Technology DRAM , Part #: MT52L512M32D2PU 107 WT: B features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on t CK